TITLE
OVERVIEW OF BIDIRECTIONAL GAN SWITCHES FOR NEXT-GENERATION MOTOR DRIVE APPLICATIONS
AUTHOR(S)
Krasimir Gichev*, Dobroslav Dankov
ABSTRACT
Recent developments in Gallium Nitride (GaN) power devices have enabled the realization of bidirectional switches that can conduct current and block voltage in both directions. These devices offer new opportunities for compact and efficient power conversion in motor drive systems, where traditional silicon or SiC solutions face trade-offs between efficiency, switching speed, and complexity[1,2]. This paper presents an overview of bidirectional GaN switch topologies, their operating principles, and practical design considerations relevant to
PMSM and BLDC motor controllers. Emphasis is placed on how these switches can simplify converter architectures, improve regenerative operation, and reduce switching losses in AC–DC, DC–DC, and inverter stages. The work is review-based, summarizing results from scientific literature, conference papers, and manufacturers’ application notes to provide a clear picture of current capabilities, limitations, and potential future directions for GaN-based motor control solutions.
DOI
DOWNLOAD
https://unitech.tugab.bg/images/2025/dokladi/2-Electronics%20and%20Sensors/p192_s2_u176_id472.pdf
How to cite this article:
Krasimir Gichev*, Dobroslav Dankov, OVERVIEW OF BIDIRECTIONAL GAN SWITCHES FOR NEXT-GENERATION MOTOR DRIVE APPLICATIONS, UNITECH – SELECTED PAPERS - 2025